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SGU20N40L

Features: • High input impedance• High peak current capability (150A)• Easy gate drive• Surface Mount : SGR20N40L• Straight Lead : SGU20N40LApplicationStrobe flash.Specifications Symbol Description SGP23N60RUFD Units VCES Collector-Emitter Voltage 400 V ...

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SeekIC No. : 004489570 Detail

SGU20N40L: Features: • High input impedance• High peak current capability (150A)• Easy gate drive• Surface Mount : SGR20N40L• Straight Lead : SGU20N40LApplicationStrobe flash.Spec...

SGU20N40L Data Sheet

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Part Number:
SGU20N40L
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

• High input impedance
• High peak current capability (150A)
• Easy gate drive
• Surface Mount : SGR20N40L
• Straight Lead : SGU20N40L


Application

Strobe flash.


Specifications

Symbol Description SGP23N60RUFD Units
VCES Collector-Emitter Voltage 400 V
VGES Gate-Emitter Voltage ±6 V
I CM(1) Pulsed Collector Current 150 A
PC Maximum Power Dissipation @ TC = 25 45 W
TJ Operating Junction Temperature -55 to +150
Tstg Storage Temperature Range -55 to +150
TL Maximum Lead Temp. for soldering
Purposes, 1/8" from case for 5 seconds		 300



Description

Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. SGU20N40L also have wide noise immunity.

These SGU20N40L devices are very suitable for strobe applications




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