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SGW10N60RUFDTM

IGBT Transistors 600V/10A/W/FRD

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SeekIC No. : 00143739 Detail

SGW10N60RUFDTM: IGBT Transistors 600V/10A/W/FRD

SGW10N60RUFDTM Data Sheet

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Part Number:
SGW10N60RUFDTM
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.2 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 16 A Gate-Emitter Leakage Current : +/- 100 nA
Power Dissipation : 75 W Maximum Operating Temperature : + 150 C
Package / Case : D2PAK-3 Packaging : Reel    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2.2 V
Gate-Emitter Leakage Current : +/- 100 nA
Package / Case : D2PAK-3
Continuous Collector Current at 25 C : 16 A
Power Dissipation : 75 W


Parameters:

Technical/Catalog InformationSGW10N60RUFDTM
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)16A
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 10A
Power - Max75W
Mounting TypeSurface Mount
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SGW10N60RUFDTM
SGW10N60RUFDTM



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