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SGW15N120

IGBT Transistors FAST IGBT NPT TECH 1200V 15A

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SeekIC No. : 00143300 Detail

SGW15N120: IGBT Transistors FAST IGBT NPT TECH 1200V 15A

SGW15N120 Data Sheet

floor Price/Ceiling Price

US $ 2.12~3.19 / Piece | Get Latest Price
Part Number:
SGW15N120
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~97
  • 97~100
  • 100~250
  • 250~500
  • Unit Price
  • $3.19
  • $2.62
  • $2.36
  • $2.12
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/20

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-247-3


Features:

• 40% lower Eoff compared to previous generation
• Short circuit withstand time 10 µs
• Designed for:
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability


Specifications

Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
1200
V
DC collector current
TC = 25°C
TC = 100°C
IC
30
15
A
Pulsed collector current, tp limited by Tjmax
I Cpul s
52
Turn off safe operating area
VCE 600V, Tj 150°C
-
52
Gate-emitter voltage
VGE
±20
V
Avalanche energy, single pulse
IC = 4 A, VCC = 50 V, RGE = 25 Ω,
start at Tj = 25°C
EAS
85
mJ
Short circuit withstand time1)
VGE = 15V, VCC 600V, Tj 150°C
tSC
10
µs
Power dissipation
TC = 25°C
P t o t
198
W
Operating junction and storage temperature
Tj , Tstg
-55...+150
°C



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