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SGW5N60RUFDTM

IGBT Transistors

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SeekIC No. : 00143746 Detail

SGW5N60RUFDTM: IGBT Transistors

SGW5N60RUFDTM Data Sheet

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Part Number:
SGW5N60RUFDTM
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/17

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 14 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 8 A Gate-Emitter Leakage Current : 60 W
Power Dissipation : 60 W Maximum Operating Temperature : + 150 C
Package / Case : D2PAK-3 Packaging : Reel    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : D2PAK-3
Power Dissipation : 60 W
Continuous Collector Current at 25 C : 8 A
Collector-Emitter Saturation Voltage : 14 V
Gate-Emitter Leakage Current : 60 W


Parameters:

Technical/Catalog InformationSGW5N60RUFDTM
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)5A
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Mounting TypeSurface Mount
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SGW5N60RUFDTM
SGW5N60RUFDTM



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