SI1031X-T1

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 6 V
Resistance Drain-Source RDS (on) : 8 Ohms
Package / Case : SC-89-3
Continuous Drain Current : 0.155 A


Pinout




Description

The SI1031X-T1 is designed as one kind of P-Channel 20-V (D-S) MOSFET that can be used in wide range of applications such as (1)drivers: relays, solenoids, lamps, hammers, displays, memories; (2)battery operated systems; (3)power supply converter circuits; (4)load/power switching cell phones, pagers. And the benefits of this device are:(1)ease in driving switches; (2)low offset (error) voltage; (3)low-voltage operation; (4)high-speed circuits; (5)low battery voltage operation. Features of the SI1031X-T1 are:(1)high-side switching; (2)low on-resistance: 8 ; (3)low threshold: 0.9 V (typ); (4)fast switching speed: 45 ns; (5)1.8-V operation; (6)gate-source ESD protection.

The absolute maximum ratings of the SI1031X-T1 can be summarized as:(1)Drain-Source Voltage: -20 V;(2)Gate-Source Voltage: +/- 6 V;(3)Continuous Drain Current (TJ = 150 ) TA = 25: -140 or -150 mA;(4)Continuous Drain Current (TJ = 150 ) TA = 85: -100 or -110 mA;(5)Pulsed Drain Current: -500 or -600 mA;(6)Continuous Source Current (diode conduction): -200 or -250 mA;(7)Operating Junction and Storage Temperature Range: 55 to 150 ;(8)Gate-Source ESD Rating (HBM, Method 3015): 2000 V.

The electrical characteristics of SI1031X-T1 can be summarized as:(1)Drain-Source Breakdown Voltage: 60 V;(2)Gate-Threshold Voltage: -0.40 to -1.20 V;(3)Gate-Body Leakage: +/- 0.5 uA or +/- 1 uA;(4)Zero Gate Voltage Drain Current: -1 or -500 nA;(5)On-State Drain Current: -200 mA;(6)Forward Trans-conductance: 0.4 s;(7)Diode Forward Voltage: -1.20 V. If you want to know more information about SI1031X-T1, please download the datasheet in www.seekic.com or www.chinaicmart.com .