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SI1300BDL-T1-GE3

MOSFET N-CH D-S 20V SC-70-3

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SeekIC No. : 003430794 Detail

SI1300BDL-T1-GE3: MOSFET N-CH D-S 20V SC-70-3

SI1300BDL-T1-GE3 Data Sheet

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Part Number:
SI1300BDL-T1-GE3
Mfg:
Supply Ability:
5000

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  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • Unit Price
  • $.35
  • $.23
  • $.19
  • $.16
  • $.13
  • $.1
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: TrenchFET® Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 400mA
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 850 mOhm @ 250mA, 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) @ Vgs: 0.84nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 35pF @ 10V
Power - Max: 200mW Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3    

Description

Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Drain to Source Voltage (Vdss): 20V
Series: TrenchFET®
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
Current - Continuous Drain (Id) @ 25° C: 400mA
Rds On (Max) @ Id, Vgs: 850 mOhm @ 250mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) @ Vgs: 0.84nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 35pF @ 10V
Power - Max: 200mW


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