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SI1400DL-T1-GE3

MOSFET N-CH D-S 20V SC-70-6

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SeekIC No. : 003430816 Detail

SI1400DL-T1-GE3: MOSFET N-CH D-S 20V SC-70-6

SI1400DL-T1-GE3 Data Sheet

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US $ .15~.44 / Piece | Get Latest Price
Part Number:
SI1400DL-T1-GE3
Mfg:
Supply Ability:
5000

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  • 25~100
  • 100~250
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  • Unit Price
  • $.44
  • $.31
  • $.27
  • $.23
  • $.2
  • $.15
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: TrenchFET® Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 1.6A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.7A, 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 600mV @ 250µA Gate Charge (Qg) @ Vgs: 4nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: -
Power - Max: 568mW Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6    

Description

Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) @ Vds: -
Series: TrenchFET®
Gate Charge (Qg) @ Vgs: 4nC @ 4.5V
Power - Max: 568mW
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Current - Continuous Drain (Id) @ 25° C: 1.6A
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA


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