SI1401EDH-T1-GE3, US $ .14-.29 , Vishay/Siliconix, SI1401EDH-T1-GE3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00147399 Detail

SI1401EDH-T1-GE3: MOSFET 12V 4A 2.8W

SI1401EDH-T1-GE3 Data Sheet

US $ .14~.29 / Piece | Get Latest Price

Part Number:: SI1401EDH-T1-GE3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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10~100
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$.29
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$.17
$.14

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15 Days
15 Days
15 Days

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Upload time: 2025/12/18

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Recent History
What is this?

Si1400DL evaluate
PinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage V...
SI1400DL-T1 evaluate
MOSFET 20V 1.7A
SI1400DL-T1-E3 evaluate
US $.17 - .34 / Piece

MOSFET 20V 1.7A

Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	- 12 V
Gate-Source Breakdown Voltage :	10 V	Continuous Drain Current :	- 4 A
Resistance Drain-Source RDS (on) :	0.028 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SC-70-6	Packaging :	Reel

Description

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 12 V
Continuous Drain Current : - 4 A
Package / Case : SC-70-6
Resistance Drain-Source RDS (on) : 0.028 Ohms
Gate-Source Breakdown Voltage : 10 V

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SI1401EDH-T1-GE3

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