Mounting Style
: SMD/SMT
Packaging
: Reel
Transistor Polarity
: P-Channel
Drain-Source Breakdown Voltage
: - 20 V
Maximum Operating Temperature
: + 150 C
Gate-Source Breakdown Voltage
: +/- 8 V
Continuous Drain Current
: - 4 A
Resistance Drain-Source RDS (on)
: 0.065 Ohms
Configuration
: Single Quad Drain
Package / Case
: SSOT-6
Pinout
DescriptionThe Si3443DV is designed as one kind of P-channel 2.5V specified PowerTrench MOSFET that can be used in wide range of applications such as load switch and battery protection and power management applications. Si3443DV has been designed to offer exceptional power dissipation in a very small footprint for applications where the large packages are impractical.
Features of the Si3443DV are:(1)fast switching speed;(2)low gate charge (7.2 nC typical);(3)high performance trench technology for extremely low RDS(ON);(4)superSOT-6 package: small footprint (72% smaller than standard SO-8); low profile (1 mm thick).
The absolute maximum ratings of the Si3443DV can be summarized as:(1)Drain-Source Voltage: -20 V;(2)Gate-Source Voltage: +/- 8 V;(3)Drain Current - Continuous: -4 A;(4)Drain Current - Pulsed: -20 A;(5)Power Dissipation for Single Operation: 0.8 or 1.6 W;(6)Operating and Storage Junction Temperature Range: -55 to +150 °C;(7)Thermal Resistance, Junction-to-Ambient: 78 °C/W;(8)Thermal Resistance, Junction-to-Case: 30 °C/W.
The electrical characteristics of Si3443DV can be summarized as:(1)Drain-Source Breakdown Voltage: -20 V;(2)Breakdown Voltage Temperature Coefficient: -16 mV/°C;(3)Zero Gate Voltage Drain Current: -1 A;(4)Gate-Body Leakage Current, Forward: 100 nA;(5)Gate-Body Leakage Current, Reverse: -100 nA;(6)Gate Threshold Voltage: -0.4 to -1.5 V;(7)Gate Threshold Voltage Temperature Coefficient: 2.5 mV/°C;(8)On-State Drain Current: -10 A;(9)Forward Transconductance: 9 S. If you want to know more information such as the electrical characteristics about Si3443DV, please download the datasheet in www.seekic.com or www.chinaicmart.com.
Parameters: | Technical/Catalog Information | SI3443DV |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 4A |
| Rds On (Max) @ Id, Vgs | 65 mOhm @ 4A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 640pF @ 10V |
| Power - Max | 800mW |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 10nC @ 4.5V |
| Package / Case | 6-TSOP |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SI3443DV
SI3443DV
SI3443DVFSDKR ND
SI3443DVFSDKRND
SI3443DVFSDKR
|
SI3443DV Data Sheet
