SI3446DV

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 6.2 A
Gate-Source Breakdown Voltage : +/- 12 V
Configuration : Single Quad Drain
Resistance Drain-Source RDS (on) : 0.024 Ohms
Package / Case : Super SOT-6


Features:

• 6.2 A, 20 V. R_DS(on) = 0.024 @ V_GS = 4.5 V
                      R_DS(on) = 0.032 @ V_GS = 2.5 V
• Fast switching speed.
• Low gate charge (10.5nC typical).
• High performance trench technology for extremely low R_DS(ON).
• SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).


Application

• DC/DC converter
• Load switch
• Battery Protection


Pinout




Specifications

Symbol	Parameter	SI3446DV
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	±12	V
ID	Load Current Continuous (Note 1)	6.2	A
	Drain Current - Pulsed	20
PD	Maximum Power Dissipation (Note 1a)                                               (Note 1b)	1.6	W
		0.8
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

This N-Channel 2.5V specified MOSFET SI3446DV is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

SI3446DV has been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages.