SI3469DV-T1-E3

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Package / Case : TSOP-6
Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 0.03 Ohms


Pinout




Description

The SI3469DV-T1-E3 is one member of the SI3469DV family which designed as one kind of P-channel 20-V (D-S) MOSFET that can be used in notebook PC,game machine and desktop.The absolute maximum ratings of the SI3469DV-T1-E3 can be summarized as:(1)drain-source voltage:-20 V;(2)gate-source voltage:+/-20 V;(3)continuous drain current (TJ=150) TA=25:-5.0 A;(4)continuous drain current (TJ=150) TA=70:-4.0 A;(5)pulsed drain current:-25 A;(6)continuous source current (diode conduction):-0.95 A;(7)maximum power dissipation (TA=25):1.14 W;(8)maximum power dissipation (TA=70):0.73 W;(9)operating junction and storage temperature range:-55 to 150.If you want to know more information such as the electrical characteristics about the SI3469DV-T1-E3,please download the datasheet in www.seekic.com or www.chinaicmart.com .

Information contained herein of SI3469DV-T1-E3 is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by SI3469DV-T1-E3. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.