Gate-Source Breakdown Voltage
: +/- 20 V
Maximum Operating Temperature
: + 175 C
Mounting Style
: SMD/SMT
Packaging
: Reel
Transistor Polarity
: P-Channel
Configuration
: Single Quad Drain Triple Source
Drain-Source Breakdown Voltage
: - 30 V
Package / Case
: SOIC-8 Narrow
Continuous Drain Current
: - 8.8 A
Resistance Drain-Source RDS (on)
: 0.02 Ohms
Features: · Ultra Low On-Resistance
· P-Channel MOSFET
· Surface Mount
· Available in Tape & ReelPinout
Specifications
|
Parameter |
Max. |
Units |
| VDS |
Drain- Source Voltage |
-30 |
V |
| ID @ TA = 25°C |
Continuous Drain Current, VGS @ 10V |
-8 |
A |
| ID @ TA= 100°C |
Continuous Drain Current, VGS @ 10V |
-6.4 |
| IDM |
Pulsed Drain Current |
-50 |
| PD @TA = 25°C |
Power Dissipation |
2.5 |
W |
| PD @TA = 70°C |
Power Dissipation |
1.6 |
|
|
Linear Derating Factor |
0.02 |
W/°C |
| VGS |
Gate-to-Source Voltage |
± 20 |
V |
TJ
TSTG |
Peak Diode Recovery dv/dt
Storage Temperature Range |
-55 to + 150 |
°C |
DescriptionThese P-channel HEXFET® Power MOSFETs of the Si4435DY from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications..
The SO-8 of the Si4435DY has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.
Parameters: | Technical/Catalog Information | SI4435DY |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 8.8A |
| Rds On (Max) @ Id, Vgs | 20 mOhm @ 8.8A, 10V |
| Input Capacitance (Ciss) @ Vds | 1604pF @ 15V |
| Power - Max | 1W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 24nC @ 5V |
| Package / Case | 8-SOIC |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SI4435DY
SI4435DY
SI4435DYFSTR ND
SI4435DYFSTRND
SI4435DYFSTR
|
SI4435DY Data Sheet
