MOSFET 20V 13.5A 3.0W 9.0mohm @ 4.5V
SI4466DY-T1-GE3: MOSFET 20V 13.5A 3.0W 9.0mohm @ 4.5V
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
| Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 9.5 A | ||
| Resistance Drain-Source RDS (on) : | 9 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SO-8 | Packaging : | Reel |