MOSFET 20V 9.1/5.3A 1.3W
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| Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
| Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 6.6 A, 3.8 A | ||
| Resistance Drain-Source RDS (on) : | 20 mOhms, 60 mOhms | Configuration : | Dual | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SOIC-8 Narrow | Packaging : | Reel |