SI5903DC-T1-GE3, US $ .5-.5, SI5903DC-T1-GE3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 003430043 Detail

SI5903DC-T1-GE3: MOSFET DUAL P-CH 20V 2.1A 1206-8

SI5903DC-T1-GE3 Data Sheet

US $ .5~.5 / Piece | Get Latest Price

Part Number:: SI5903DC-T1-GE3
Mfg:
Supply Ability:: 5000

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What is this?

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MOSFET 30V 3.9A 2.1W
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MOSFET 20V 4.2A 2.1W
SI5933CDC-T1-GE3 evaluate
US $.13 - .22 / Piece

MOSFET 20V 3.7A 2.8W

Product Details

Quick Details

Series:	TrenchFET®	Manufacturer:	Vishay Siliconix
FET Type:	2 P-Channel (Dual)	FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V	Drain Source Voltage VDS :	+ / - 20 V
Current - Continuous Drain (Id) @ 25° C:	2.1A	Rds On (Max) @ Id, Vgs:	155 mOhm @ 2.1A, 4.5V
Vgs(th) (Max) @ Id:	600mV @ 250µA	Gate Charge (Qg) @ Vgs:	6nC @ 4.5V
Input Capacitance (Ciss) @ Vds:	-	Power - Max:	1.1W
Mounting Type:	Surface Mount	Package / Case:	8-SMD, Flat Lead
Supplier Device Package:	1206-8 ChipFET?

Description

Series: TrenchFET®
Manufacturer: Vishay Siliconix
FET Feature: Logic Level Gate
Input Capacitance (Ciss) @ Vds: -
Mounting Type: Surface Mount
FET Type: 2 P-Channel (Dual)
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 600mV @ 250µA
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?
Power - Max: 1.1W
Gate Charge (Qg) @ Vgs: 6nC @ 4.5V
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25° C: 2.1A
Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V

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SI5903DC-T1-GE3

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