Features: TrenchFET®Power MOSFET 100% RgTestedPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 Continuous Drain Current(TJ= 150C) TA= 25 ID 8.1 6.8 A TA= 70 6.6 5.4 Pulsed Drain Curren...
SI6466ADq: Features: TrenchFET®Power MOSFET 100% RgTestedPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 Co...
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| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 20 | V | ||
| Gate-Source Voltage | VGS | 8 | |||
| Continuous Drain Current(TJ= 150C) |
TA= 25 |
ID | 8.1 | 6.8 | A |
| TA= 70 |
6.6 | 5.4 | |||
| Pulsed Drain Current (10 witdh) |
IDM | 30 | |||
| Continuous Source Current (Diode Conduction)a | IS | 1.35 | 0.95 | ||
| Maximum Power Dissipationa |
TA= 25 |
PD | 1.5 | 1.05 | W |
| TA= 70 |
1.0 | 0.67 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||