SI6562CDQ-T1-GE3, US $ .41-.67 , Vishay/Siliconix, SI6562CDQ-T1-GE3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00148639 Detail

SI6562CDQ-T1-GE3: MOSFET 20V 6.7/6.1A 22/30mohm @ 4.5V

SI6562CDQ-T1-GE3 Data Sheet

US $ .41~.67 / Piece | Get Latest Price

Part Number:: SI6562CDQ-T1-GE3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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$.41

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Upload time: 2026/5/13

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Recent History
What is this?

SI65 evaluate
Features: ·Low profile (4.85mm max. height) SMD type.·Unshielded.·Self-leads, suitable for high de...
SI6542DQ-T1 evaluate
MOSFET 20V 2.5/1.9A
SI6543DQ-T1 evaluate
MOSFET 30V 3.9/2.5A

Product Details

Quick Details

Transistor Polarity :	N and P-Channel	Drain-Source Breakdown Voltage :	20 V
Gate-Source Breakdown Voltage :	+/- 12 V	Continuous Drain Current :	5.7 A, - 5.1 A
Resistance Drain-Source RDS (on) :	22 mOhms at 4.5 V at N Channel, 30 mOhms at 4.5 V at P Channel	Configuration :	Dual Dual Source
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TSSOP-8	Packaging :	Reel

Description

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Transistor Polarity : N and P-Channel
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : TSSOP-8
Configuration : Dual Dual Source
Continuous Drain Current : 5.7 A, - 5.1 A
Resistance Drain-Source RDS (on) : 22 mOhms at 4.5 V at N Channel, 30 mOhms at 4.5 V at P Channel

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SI6562CDQ-T1-GE3

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