SI6926DQ

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 5.5 A
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : TSSOP-8
Configuration : Dual Dual Source
Resistance Drain-Source RDS (on) : 21 mOhms at 4.5 V


Features:

• 5.5 A, 20 V. RDS(ON) = 0.021 @ V_GS = 4.5 V
   RDS(ON) = 0.035 @ V_GS = 2.5 V
• Extended V_GSS range (±12V) for battery applications
• Low gate charge
• High performance trench technology for extremely
  low R_DS(ON)
• Low profile TSSOP-8 package


Application

• Load switch
• Motor drive
• DC/DC conversion
• Power management


Pinout




Specifications

Symbol	Parameter		Ratings	Units
VDSS	Drain-Source Voltage		20	V
VGSS	Gate-Source Voltage		±12	V
ID	Drain Current Continuous	(Note 1a)	5.5	A
	Pulsed		30
PD	Power Dissipation	(Note 1a)	1.0	W
		(Note 1b)	0.6
TJ, TSTG	Operating and Storage Junction Temperature Range		-55 to +150	°C

Description

This N-Channel 2.5V specified MOSFET SI6926DQ is a rugged gate version of Fairchild's Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).