SI7120DN-T1-E3

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 6.3 A
Maximum Operating Temperature : + 150 C
Package / Case : PowerPAK 1212-8
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 19 mOhms


Description

The SI7120DN-T1-E3 is one member of the SI7120DN family and designed as the N-channel 60-V(D-S) MOSFET with some features such as:(1)100% Rg tested;(2)PowerPAK 1212-8 package with low 1.07-mm profile;(3)new low thermal resistance;(4)TrenchFET power MOSFET.Also it can be used in primary side switch and synchronous rectification.

The absolute maximum ratings of the SI7120DN-T1-E3 can be summarized as:(1)drain-source voltage:60 V;(2)gate-source voltage:+/-20 V;(3)pulsed drain current:40 A;(4)continuous source current (diode conduction):3.2A(10 secs) or 1.3A(steady state);(5)single avalanche current:22 A;(6)single avalanche energy:24 mJ;(7)operating junction and storage temperature range:-55 to 150;(8)soldering recommendations (peak temperature):260;(9)maximum junction-to-ambient:26/W(t</=10 sec.) or 65/W(steady state);(10)maximum junction-to-case(drain):1.9/W.Note:a.surface mounted on 1"x 1" FR4 board.b.see solder profile.The PowerPAK 1212-8 is a leadless package.The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing.A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.c.rework conditions:manual soldering with a soldering iron SI7120DN-T1-E3 is not recommended for leadless components.