Features: TrenchFET® Power MOSFETNew PowerPAK®Package−Low Thermal Resistance, RthJC−Low 1.07-mm ProfileApplicationLoad SwitchSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 ...
Si7413DN: Features: TrenchFET® Power MOSFETNew PowerPAK®Package−Low Thermal Resistance, RthJC−Low 1.07-mm ProfileApplicationLoad SwitchSpecifications Parameter Symbol 5 secs ...
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| Parameter |
Symbol |
5 secs |
Steady State |
Unit | |
| Drain-Source Voltage |
VDS |
-20 |
V | ||
| Gate-Source Voltage |
VGS |
±8 | |||
| Continuous Drain Current(TJ= 150 )a |
TA= 25 |
ID
|
-13.2 |
-8.4 |
A |
| TA= 85 |
-9.5 |
-6.1 | |||
| Pulsed Drain Current (10s Pulse Width) |
IDM |
-30 | |||
| Continuous Source Current (Diode Conduction)a |
IS |
-3.2 |
-1.3 | ||
| Maximum Power Dissipationa | TA= 25 |
PD |
3.8 |
1.5 |
W |
| TA= 85 |
2.0 |
0.8 | |||
| Operating Junction and Storage Temperature Range |
TJ, Tstg |
−55 to 150 |
|||