SI7461DP-T1-E3

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Package / Case : PowerPAK SO
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 14.5 mOhms
Continuous Drain Current : 8.6 A


Description

The SI7461DP-T1-E3 is designed as one kind of P-channel 60-V (D-S) MOSFET that can be used in automotive applications such as (1)12-V boardnet; (2)high-side switches; (3)motor drives. And this device has two points of features: (1)TrenchFET power MOSFET; (2)new low thermal resistance powerPAK package with low 1.07-mm profile.

The absolute maximum ratings of the SI7461DP-T1-E3 can be summarized as:(1)Drain-Source Voltage: -60 V;(2)Gate-Source Voltage: +/- 20 V;(3)Pulsed Drain Current: -60 A;(4)Continuous Source Current (Diode Conduction): -4.5 to -1.6 A;(5)Avalanche Current: 50 A;(6)Single Pulse Avalanche Energy: 125 mJ;(7)Operating Junction and Storage Temperature Range: -55 to 150 .

The specifications (TJ = 25 unless otherwise noted) of SI7461DP-T1-E3 can be summarized as:(1)Gate Threshold Voltage: -1 to -3 V;(2)Gate-Body Leakage: +/-100 nA;(3)On-State Drain Current: -40 A;(4)Forward Transconductance: 31 S;(5)Diode Forward Voltage: -0.8 to -1.2 V;(6)Source-Drain Reverse Recovery Time: 45 to 710 ns. If you want to know more information about SI7461DP-T1-E3, please download the datasheet in www.seekic.com or www.chinaicmart.com .