MOSFET 30V 35A 37.9W 9.5mohm @ 10V
SI7686DP-T1-GE3: MOSFET 30V 35A 37.9W 9.5mohm @ 10V
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 17.9 A | ||
Resistance Drain-Source RDS (on) : | 9.5 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | PowerPAK SO-8 | Packaging : | Reel |