SI7868DP-T1-E3

The SI7868DP-T1-E3 is one member of the SI7868DP family which is designed as the P-channel 30-V (D-S) MOSFET that has two points of features:(1)TrenchFET Power MOSFET; (2)Low rDS(on); (3)PWM (Qgd and RG) Optimized. And it can be used in low output voltage synchronous rectifier applications.

The absolute maximum ratings of the SI7868DP-T1-E3 can be summarized as:(1)Drain-Source Voltage: 20 V;(2)Gate-Source Voltage: +/- 16 V;(3)Continuous Drain Current (TJ = 150) TA = 25: 29 to 18 A;(4)Continuous Drain Current (TJ = 150) TA = 70: 25 to 14 A;(5)Pulsed Drain Current: 60 A;(6)Continuous Source Current (Diode Conduction): 4.5 to 1.6 A;(7)Maximum Power Dissipation: 1.2 to 5.4 W;(8)Operating Junction and Storage Temperature Range:-55 to +150 .

The electrical characteristics of this device can be summarized as:(1)Gate Threshold Voltage: 0.6 to 1.5 V;(2)Gate-Body Leakage: +/- 100 nA;(3)Zero Gate Voltage Drain Current: 1 uA or 5 uA;(4)On-State Drain Current: 30 A;(5)Drain-Source On-State Resistance: 0.0018 to 0.00225 ;(6)Forward Transconducta-nce: 95 s;(7)Diode Forward Voltage: 0.63 to 1.1 V. If you want to know more information such as the electrical characteristics about the SI7868DP-T1-E3, please download the datasheet in www.seekic.com or www.chinaicmart.com.