SI7884DP-T1-E3

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 40 V
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 7 mOhms
Package / Case : PowerPAK SO-8
Continuous Drain Current : 12 A


Description

The SI7884DP-T1-E3 is a kind of N-channel 40 V (D-S)MOSFET.

Features of the SI7884DP-T1-E3 are:(1)TrenchFET power MOSFET; (2)new low thermal resistance PowerPAK; (3)package with low 1.07-mm profile; (4)PWM optimized for fast switching; (5)100% Rg tested.

The absolute maximum ratings of the SI7884DP-T1-E3 can be summarized as:(1): drain-source voltage (VDS) is  40 V; (2): gate-source voltage(VGS) is  ±20; (3): pulsed drain current(IDM) is  50 A; (4): avalanche current (L = 0.1 mH, IAS) is 30 A; (5): operating junction and storage temperature range(TJ, Tstg) is -55 to 150.