SI7900EDN-T1-E3

The SI7900EDN-T1-E3 is one member of the SI7900EDN family which is designed as the dual N-channel 20-V (D-S) MOSFET that has three points of features:(1)TrenchFET Power MOSFETS: 1.8-V Rated; (2)New PowerPak Package: Low-Thermal Resistance, RthJC and Low 1.07-mm Profile; (3)3000-V ESD Protection. And it can be used in Protection Switch for 1-2 Li-ion Batteries applications.

The absolute maximum ratings of the SI7900EDN-T1-E3 can be summarized as:(1)Drain-Source Voltage: 20 V;(2)Gate-Source Voltage: +/- 12 V;(3)Continuous Drain Current (TJ = 150) TA = 25: 9 to 6 A;(4)Continuous Drain Current (TJ = 150) TA = 85: 6.4 to 4.3 A;(5)Pulsed Drain Current: 30 A;(6)Continuous Source Current (Diode Conduction): 2.9 to 1.4 A;(7)Maximum Power Dissipation: 0.79 to 3.2 W;(8)Operating Junction and Storage Temperature Range:-55 to +150 .

The electrical characteristics of this device can be summarized as:(1)Gate Threshold Voltage: 0.40 V;(2)Gate-Body Leakage: +/- 1 uA;(3)Zero Gate Voltage Drain Current: 1 uA or 20 uA;(4)On-State Drain Current: 20 A;(5)Drain-Source On-State Resistance: 0.0021 to 0.0026 ;(6)Forward Transconductance: 25 s;(7)Diode Forward Voltage: 0.65 to 1.1 V. If you want to know more information such as the electrical characteristics about the SI7900EDN-T1-E3, please download the datasheet in www.seekic.com or www.chinaicmart.com.