MOSFET 12V 6.4A 2.0W 35mohm @ 4.5V
SI9934BDY-T1-GE3: MOSFET 12V 6.4A 2.0W 35mohm @ 4.5V
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 12 V | ||
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 6.4 A | ||
Resistance Drain-Source RDS (on) : | 35 mOhms | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 Narrow | Packaging : | Reel |