SI9934DY

Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : - 5 A
Resistance Drain-Source RDS (on) : 36 m Ohms


Features:

• 5 A, 20 V, R _DS(ON) = 50 m @ V_GS = 4.5 V
                       R _DS(ON) = 74 m @ V_GS = 2.5 V
• Extended VGSS range (±12V) for battery applications
• Low gate charge
• High performance trench technology for extremely low R _DS(ON)
• High power and current handling capability


Application

• Load switch
• Motor drive
• DC/DC conversion
• Power management


Pinout




Specifications

Symbol	Parameter	Si4920DY	Units
VDSS	Drain-Source Voltage	-20	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	-5	A
		-30
PD	Power Dissipation for Dual Operation	2.0	W
	Power Dissipation for Single Operation (Note 1a (Note 1b) (Note 1c)	1.6
		0.9
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +175	°C
THERMAL CHARACTERISTICS
RJA	Thermal Resistance, Junction-to-Ambient (Note 1a)	78	°C/W
RJC	Thermal Resistance, Junction-to-Case (Note 1)	40	°C/W

Description

This SI9934DY P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. SI9934DY has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).