SIA411DJ-T1-GE3, US $ .36-.61 , Vishay/Siliconix, SIA411DJ-T1-GE3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00150186 Detail

SIA411DJ-T1-GE3: MOSFET 20V 12A 19W 30mohm @ 4.5V

SIA411DJ-T1-GE3 Data Sheet

US $ .36~.61 / Piece | Get Latest Price

Part Number:: SIA411DJ-T1-GE3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

Price Break

Qty
0~1
1~10
10~100
100~250

Unit Price
$.61
$.47
$.41
$.36

Processing time
15 Days
15 Days
15 Days
15 Days

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Recent History
What is this?

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US $.16 - .32 / Piece

MOSFET 12V 4.5A 19W 19.8mohm @ 4.5V

Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	20 V
Gate-Source Breakdown Voltage :	+/- 8 V	Continuous Drain Current :	8.8 A
Resistance Drain-Source RDS (on) :	30 mOhms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	PowerPAK SC-70-6L	Packaging :	Reel

Description

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Resistance Drain-Source RDS (on) : 30 mOhms
Package / Case : PowerPAK SC-70-6L
Continuous Drain Current : 8.8 A

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SIA411DJ-T1-GE3

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