MOSFET 100V 11.3A 19W 83mohm @ 10V
SIA416DJ-T1-GE3: MOSFET 100V 11.3A 19W 83mohm @ 10V
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V |
| Gate-Source Breakdown Voltage : | 3 V | Continuous Drain Current : | 11.3 A |
| Resistance Drain-Source RDS (on) : | 0.083 Ohms | Configuration : | Single |
| Mounting Style : | SMD/SMT | Package / Case : | SC-70-6L |
| Packaging : | Reel |