SIA519EDJ

The SIA519EDJ is designed as one kind of dual N- and P-Channel 20-V (D-S) MOSFET device that can be used in wide range of applications such as (1)load switch for portable devices; (2)DC/DC converters. And this device has some points of features:(1)Halogen-free According to IEC 61249-2-21 Definition; (2)TrenchFET-Power MOSFETs; (3)Typical ESD Protection: N-Channel 2000 V P-Channel 1900 V; (4)100 % Rg Tested; (5)Compliant to RoHS Directive 2002/95/EC.

The absolute maximum ratings of the SIA519EDJ can be summarized as:(1)Drain-Source Voltage: +/-20 V;(2)Gate-Source Voltage: +/- 12 V;(3)Pulsed Drain Current: +15 or -15 A;(4)Maximum Power Dissipation: 1.2 to 7.8 W;(5)Continuous Drain Current (TJ = 150 °C): 4.5 A;(6)Operating Junction and Storage Temperature Range: -55 to 150 ;(7)Soldering Recommendations (Peak Temperature): 260 .

The electrical characteristics of the SIA519EDJ can be summarized as:(1)Drain-Source Breakdown Voltage: +/-20 V;(2)VDS Temperature Coefficient: 23 or -11 mV/°C;(3)VGS(th) Temperature Coefficient: -3.3 or 2.6 mV/°C;(4)Gate-Source Threshold Voltage: 0.6 to 1.4 V;(5)Gate-Body Leakage: ±0.5 uA;(6)On-State Drain Current: +/-10 A;(7)Forward Transconductance: 12 or 7 S. If you want to know more information about the SIA519EDJ, please download the datasheet in www.seekic.com or www.chinaicmart.com .