SIA533EDJ-T1-GE3, US $ .22-.44 , Vishay/Siliconix, SIA533EDJ-T1-GE3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00148852 Detail

SIA533EDJ-T1-GE3: MOSFET 12V 4.5A/4.5A N&P-CH MOSFET

SIA533EDJ-T1-GE3 Data Sheet

US $ .22~.44 / Piece | Get Latest Price

Part Number:: SIA533EDJ-T1-GE3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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1~25
25~100
100~250

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$.44
$.3
$.26
$.22

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15 Days
15 Days
15 Days
15 Days

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Upload time: 2026/6/12

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Recent History
What is this?

SIA511DJ-T1-GE3 evaluate
US $.37 - .61 / Piece

MOSFET N/P-Ch MOSFET 12V 40/70mohms@4.5V
SiA517DJ-T1-GE3 evaluate
US $.23 - .46 / Piece

MOSFET 12V 4.5A 6.5W 29/61mohm @ 4.5V
SIA519EDJ evaluate
DescriptionThe SIA519EDJ is designed as one kind of dual N- and P-Channel 20-V (D-S) MOSFET device...

Product Details

Quick Details

Transistor Polarity :	N and P-Channel	Drain-Source Breakdown Voltage :	+/- 12 V
Continuous Drain Current :	+/- 4.5 A, - 3.7 A	Resistance Drain-Source RDS (on) :	0.028 Ohms, 0.048 Ohms
Configuration :	Single	Maximum Operating Temperature :	+ 150 C
Mounting Style :	SMD/SMT	Package / Case :	PowerPAK SC-70-6
Packaging :	Reel

Description

Gate-Source Breakdown Voltage :
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Transistor Polarity : N and P-Channel
Package / Case : PowerPAK SC-70-6
Drain-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : +/- 4.5 A, - 3.7 A
Resistance Drain-Source RDS (on) : 0.028 Ohms, 0.048 Ohms

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SIA533EDJ-T1-GE3

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