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SIGC06T120CS

Features: ` 1200V NPT technology` 180m chip` short circuit prove` positive temperature coefficient` easy parallelingApplicationdrives, SMPS, resonant applicationsSpecifications Parameter Symbol Value Unit Collector-emitter voltage, Tj=25 °C VCE 1200 V DC collector curr...

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SIGC06T120CS: Features: ` 1200V NPT technology` 180m chip` short circuit prove` positive temperature coefficient` easy parallelingApplicationdrives, SMPS, resonant applicationsSpecifications Parameter Sym...

SIGC06T120CS Data Sheet

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Part Number:
SIGC06T120CS
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

` 1200V NPT technology
` 180m chip
` short circuit prove
` positive temperature coefficient
` easy paralleling


Application

drives, SMPS, resonant applications


Specifications

Parameter
Symbol
Value
Unit
Collector-emitter voltage, Tj=25 °C
VCE
1200
V
DC collector current, limited by Tjmax
IC
1 )
A
Pulsed collector current, tp limited by Tjmax
Icpuls
6
A
Gate emitter voltage
VGE
±20
V
Operating junction and storage temperature
Tj, Tstg
-55 ... +150
°C


1 ) depending on thermal properties of assembly




Description

AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld


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