MOSFET 560V 20A 292W 270mohm @ 10V
SIHG20N50C-E3: MOSFET 560V 20A 292W 270mohm @ 10V
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
| Gate-Source Breakdown Voltage : | 30 V | Continuous Drain Current : | 20 A | ||
| Resistance Drain-Source RDS (on) : | 0.225 Ohms | Mounting Style : | Through Hole | ||
| Package / Case : | TO-247 | Packaging : | Tube |