SIR-563ST3F

Radiant Intensity :
Maximum Operating Temperature : + 85 C
Packaging : Bulk
Package / Case : T-1 3/4
Wavelength : 940 nm
Minimum Operating Temperature : - 25 C
Beam Angle : 15 deg


Features:

1) High efficiency, high output PO = 11.0 mW (I_F = 50 mA).
2) Wide radiation angle 1 / 2 = 15deg.
3) Emission spectrum well suited to silicon detectors (_P = 940 nm).
4) Good current-optical output linearity.
5) Long life, high reliability.
6) Low cost, clear epoxy resin package.

Application

Optical control equipment
Light source for remote control devices


Specifications

Parameter	Symbol	Limits	Unit
Forward current	IF	100	mA
Reverse voltage	VR	5	V
Power dissipation	PD	160	mW
Pulse forward current	IFP*	1.0	A
Operating temperature	Topr	−25~+85	°C
Storage temperature	Tstg	−40~+85	°C

Description

The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940 nm peak wavelength suitable for silicon detectors. It has a wide radiation angle and is ideal for compact optical control equipment.