SIS454DN

The SIS454DN is designed as one kind of dual N-channel 20-V (D-S) MOSFET device that can be used in wide range of applications such as DC/DC converter. And this device has some points of features:(1)Halogen-free According to IEC 61249-2-21 Definition; (2)TrenchFET-Power MOSFET; (3)100 % Rg Tested; (4)100 % UIS Tested; (5)Compliant to RoHS Directive 2002/95/EC.

The absolute maximum ratings of the SIS454DN can be summarized as:(1)Drain-Source Voltage: 20 V;(2)Gate-Source Voltage: +/- 20 V;(3)Pulsed Drain Current: 100 A;(4)Maximum Power Dissipation: 2.0 to 52 W;(5)Continuous Drain Current (TJ = 150 °C): 20 to 35 A;(6)Operating Junction and Storage Temperature Range: -55 to 150 ;(7)Soldering Recommendations (Peak Temperature): 260 .

The electrical characteristics of the SIS454DN can be summarized as:(1)Drain-Source Breakdown Voltage: 20 V;(2)VDS Temperature Coefficient: 18 mV/°C;(3)VGS(th) Temperature Coefficient: -5.3 mV/°C;(4)Gate-Source Threshold Voltage: 1.0 to 2.2 V;(5)Gate-Source Leakage: ±100 nA;(6)On-State Drain Current: 40 A;(7)Forward Transconductance: 70 S. If you want to know more information about the SIS454DN, please download the datasheet in www.seekic.com or www.chinaicmart.com .