SIS890DN-T1-GE3, US $ .31-.4 , Vishay/Siliconix, SIS890DN-T1-GE3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00157064 Detail

SIS890DN-T1-GE3: MOSFET 100V 30A 52W 23.5mohn @ 10V

SIS890DN-T1-GE3 Data Sheet

US $ .31~.4 / Piece | Get Latest Price

Part Number:: SIS890DN-T1-GE3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

Price Break

Qty
0~1820
1820~3000
3000~6000
6000~12000

Unit Price
$.4
$.34
$.32
$.31

Processing time
15 Days
15 Days
15 Days
15 Days

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Upload time: 2025/12/25

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Recent History
What is this?

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US $.43 - .71 / Piece

MOSFET 100V 28A 52W 33mohm @ 10V
SIS892DN-T1-GE3 evaluate
US $.5 - .69 / Piece

MOSFET 100V 30A 43W 29 mohms @ 10V

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	100 V
Gate-Source Breakdown Voltage :	3 V	Continuous Drain Current :	30 A
Resistance Drain-Source RDS (on) :	0.0235 Ohms	Configuration :	Dual
Mounting Style :	SMD/SMT	Package / Case :	PowerPAK 1212-8
Packaging :	Reel

Description

Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : 3 V
Configuration : Dual
Continuous Drain Current : 30 A
Package / Case : PowerPAK 1212-8
Resistance Drain-Source RDS (on) : 0.0235 Ohms

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SIS890DN-T1-GE3

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