SK1119

The SK1119 is designed as one kind of TOSHIBA field effect transistor silicon N-channel MOS type that can be used in high speed, high current switching and DC-DC converter and motor drive applications. Features of the SK1119 are:(1)low drain-source ON resistance: RDS(ON) = 3.0 (typ.);(2)high forward transfer admittance: Yfs = 2.0 s (typ.);(3)low leakage current: IDSS = 300 uA (max.);(4)enhancement-mode: Vth = 1.5 to 3.5 V.

The absolute maximum ratings of the SK1119 can be summarized as:(1)drain-source voltage: 1000 V;(2)drain-gate voltage: 1000 V;(3)gate-source voltage: +/- 20 V;(4)drain current: 4 (DC) or 12 (pulse) A;(5)drain power dissipation: 100 W;(6)channel temperature: 150 ;(7)storage temperature range: -55 to +150 .

The electrical characteristics of SK1119 can be summarized as:(1)gate leakage current: +/- 100 nA;(2)drain cut-off current: 300 uA;(3)drain-source breakdown voltage: 1000 V;(4)gate threshold voltage: 1.5 to 3.5 V;(5)drain-source ON resistance: 3.0 to 3.8 ;(6)forward transfer capacitance: 55 pF;(7)input capacitance: 700 pF. If you want to know more information about the SK1119, please download the datasheet in www.seekic.com or www.chinaicmart.com .