SK32C-T

The SK32C-T is designed as one kind of Silicon VDMOS and LDMOS transistor that can be used in Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and other applications. SK32C-T features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.

The absolute maximum ratings of the SK32C-T can be summarized as:(1)Total Device Dissipation: 90 Watts;(2)Junction to Case Thermal Resistance: 1.60 /W;(3)Maximum Junction Temperature: 200 ;(4)Storage Temperature: -65 to +150 ;(5)DC Drain Current: 5.1 A;(6)Drain to Gate Voltage: 70 V;(7)Drain to Source Voltage: 70 V;(8)Gate to Source Voltage: 20 V.

The electrical characteristics of SK32C-T can be summarized as:(1)Drain Breakdown Voltage: 65 V;(2)Zero Bias Drain Current: 0.8 mA;(3)Gate Leakage Current: 1 uA;(4)Gate Bias for Drain Current: 1 to 7 V;(5)Forward Transconductance: 1.2 Mho;(6)Saturation Resistance: 1.00 Ohm;(7)Saturation Current: 5.60 amps;(8)Common Source Input Capacitance: 40.0 pF;(9)Common Source Feedback Capacitance: 2.4 pF;(10)Common Source Output Capacitance: 24.0 pF. If you want to know more information about the SK32C-T, please download the datasheet in www.seekic.com or www.chinaicmart.com .