SK710

The SK710 is designed as one kind of TOSHIBA field effect transistor silicon N-channel junction type device that can be used in high frequency amplifier applications, AM high frequency amplifier applications and audio frequency amplifier applications. Features of the SK710 are:(1)high Yfs = 25 mS (typ.);(2)low Ciss = 7.5 pF (typ.);(3)low noise.

The absolute maximum ratings of the SK710 can be summarized as:(1)gate-drain voltage: -20 V;(2)gate current: 100 mA;(3)drain power dissipation: 200 mW;(4)junction temperature: 125 ;(5)storage temperature range: -55 to +125 .

The electrical characteristics of SK710 can be summarized as:(1)gate leakage current: -1.0 nA;(2)gate-drain breakdown voltage: -20 V;(3)drain current: 6 to 32 mA;(4)gate-source cut-off voltage: -2.5 V;(5)forward transfer admittance: 15 to 25 mS;(6)input capacitance: 7.5 to 10 pF;(7)reverse transfer capacitance: 2 to 3 pF;(8)noise figure: 0.5 to 3 dB. If you want to know more information such as the electrical characteristics about SK710, please download the datasheet in www.seekic.com or www.chinaicmart.com.