SKB06N60

IGBT Transistors FAST IGBT NPT TECH 600V 6A

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SeekIC No. : 00143342 Detail

SKB06N60: IGBT Transistors FAST IGBT NPT TECH 600V 6A

floor Price/Ceiling Price

US $ .62~.71 / Piece | Get Latest Price
Part Number:
SKB06N60
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~450
  • 450~900
  • 900~1000
  • Unit Price
  • $.71
  • $.62
  • $.62
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/3/28

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-220-3 Packaging : Reel    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220-3


Specifications

Parameter

Symbol

Value

Units

Collector-emitter voltage

VCE

600

V

DC collector current
TC = 25°C
TC = 100°C

IC

12
6.9

A

Pulsed collector current, tp limited by Tjmax

ICpuls

24

Turn off safe operating area
VCE 600V, Tj
150°C

-

24

Diode forward current
TC = 25°C
TC = 100°C

IF

12
6

Diode pulsed current, tp limited by Tjmax

IFpuls

24

Gate-emitter voltage

VGE

±20

V

Short circuit withstand time1)
VGE = 15V, VCC 600V, Tj
150°C

tSC

10

µs

Power dissipation
T = 25°C

Ptot

68

W

Operating junction and storage temperature

Tj , Tstg

-55...+150

°C




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