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SKB15N60HS

IGBT Transistors HIGH SPEED NPT TECH 600V 15A

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SeekIC No. : 00143271 Detail

SKB15N60HS: IGBT Transistors HIGH SPEED NPT TECH 600V 15A

SKB15N60HS Data Sheet

floor Price/Ceiling Price

US $ .91~1.19 / Piece | Get Latest Price
Part Number:
SKB15N60HS
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~610
  • 610~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $1.19
  • $1
  • $.95
  • $.91
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-263-3 Packaging : Reel    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-263-3


Features:

• 30% lower Eoff compared to previous generation  
• Short circuit withstand time -10 µs  
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
•  High ruggedness, temperature stable behaviour
•  Pb-free lead plating; RoHS compliant
•  Qualified according to JEDEC1 for target applications
•  Complete product spectrum and PSpice Models


Specifications

Parameter Symbol Value Unit
Collector-emitter voltage
VCE
600
V
DC collector current
TC = 25°C
TC = 100°C
IC
27
15
A
Pulsed collector current, tp limited by Tjmax
ICpuls
60
Turn off safe operating area
VCE 600V, Tj 150°C
-
60
Diode forward current
TC = 25°C
TC = 100°C
IF
40
20
Diode pulsed current, tp limited by Tjmax
IFpuls
80
Gate-emitter voltage static
transient (tp<1µs, D<0.05)
VGE
±20
±30
V
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150°C
tSC
10
µs
Power dissipation
TC = 25°C
Ptot
138
W
Operating junction and storage temperature
Tj , Tstg
-55...+150
°C
Time limited operating junction temperature for t < 150h
Tj(tl)
175
Soldering temperature (reflow soldering, MSL1)
-

220
 1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.


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