SKCD09C060IHD

The SKCD09C060IHD (IF =30A, VRRM = 600 V, Size: 2,95mm X 2,95mm, Package: wafer frame) possesses the features of high current density, easy paralleling due to a small forward voltage spread and a positive temperature coefncient, very soft recovery behavior, small switching losses, high ruggedness compatible to thick wire bonding, compatible to standard solder processes, which is typically applicated as freewheeling diode for 600V IGBT.

The absolute maximum ratings of SKCD09C060IHD are VRRM(@ Tvj =25, IR =0,2 mA)=600V, IF(AV)(@ 80, Tvjmax=175)=20A, IFSM(@ Tvj = 25, 10 ms, half sine wave)/(@Tvj = 150, 10 ms, half sine wave )=185A/160A, Tvjmax=+175. The electrical characteristics of SKCD09C060IHD are I2t(@ Tvj=150, 10 ms, half sine

wave)=128 (max)A2s, IR(@ Tvj =25, VRRM)/(@ Tvj =150, VRRM)=0,1mA(max)/--, VF(@ Tvj =25, IF=19A)/(@ Tvj =150, IF=19A)=1,35(TYP)V/1.31(TYP)V, V(TO)(@ Tvj =150)=0,85V, rT(@ Tvj =150)=25,1m. And the thermal characteristics of SKCD09C060IHD are Tvj=-40 to +175=Tstg, Tsolder(@ 10 min)/(@ 5 min)=+250/+320, Rth(j-h)(@ soldered on 0, 38 mm DCB, reference point on copper heatsink close to the chip)=2,11(typ)K/W. The Mechanical Characteristics of SKCD09C060IHD are raster size(2,95mm X 2,95mm), Area total(8,70 mm2), Chips/wafer(1175 pcs), Anode metallisation(bendable (AI)), Cathode metallisation(solderable (Ag/Ni)), wire bond(AI, diameter500 m).

This technical information specifies semiconductor devices about SKCD09C060IHD. No warranty or guarantee regarding delivery, performance or suitability.