SKCD23C120I3

The SKCD23C120I3 (IF = 30 A, VRRM =1200 V, Size: 6,56mm X3,53 mm, Package: wafer frame) possesses the features of using in 600V, 1200V and 1700V, low forward voltage drop, easy paralleling due to a small forward voltage spread, low temperature dependence, very soft recovery behavior small switching losses, high ruggedness, compatible to thick wire bonding compatible to all standard solder processes, SKCD23C120I3 is typically applicated as freewheeling diode for IGBT and optimal at frequencies > 8kHz.

The absolute maximum ratings of SKCD23C120I3 are VRRM(@ Tvj =25, IR = 0,1mA)=1200V, IF(AV)(@ 80, Tvjmax=150)=20 A, IFSM(@ Tvj = 25, 10 ms, half sine wave)/(@Tvj = 150, 10 ms, half sine wave )=--A/250A, Tvjmax=+150. The electrical characteristics of SKCD23C120I3 are I2t(@ Tvjmax, 10 ms, half sine wave)=310(max)A2s, IR(@ Tvj =25, VRRM)/(@ Tvj =125, VRRM)=0,1 mA(max)/--, VF(@ Tvj =25, IF=25A)/(@ Tvj =125, IF=25A)=2(TYP)V/1,79(TYP)V, V(TO)(@ Tvj =125)=1,18V, rT(@ Tvj =125)=25,2m.And the thermal characteristics of SKCD23C120I3 are Tvj=-40 to +150=Tstg, Tsolder(@ 10 min)/(@ 5 min)=+250/+320, Rth(j-h)(@ soldered on 0, 38 mm DCB, reference point on copper heatsink close to the chip)=1, 25(typ)K/W. The Mechanical Characteristics of SKCD23C120I3 are raster size(6, 56*3, 53mm), Area total(23, 16mm2), Chips/wafer(423 pcs), Anode metallisation(bendable (AI)),  Cathode metallisation(solderable (Ag/Ni)), wire bond(AI, diameter500 pm).

This technical information about SKCD23C120I3 specifies semiconductor devices. No warranty or guarantee regarding delivery, performance or suitability.