SKCD24C060IHD

The SKCD24C060IHD(IF = 75 A, VRRM = 600 V, Size: 4,9 mm X 4,9 mm, Package: wafer frame) possesses the features of high current density, easy paralleling due to a small forward voltage spread and a positive temperature coefncient, very soft recovery behavior, small switching losses, high ruggedness compatible to thick wire bonding, compatible to standard solder processes, SKCD24C060IHD is typically applicated as freewheeling diode for 600V IGBT.

The absolute maximum ratings of SKCD24C060IHDS are VRRM(@ Tvj =25, IR = 0,2 mA)=600V, IF(AV)(@ 80, Tvjmax=175)=45 A, IFSM(@ Tvj = 25, 10 ms, half sine wave)/(@Tvj = 150, 10 ms, half sine wave )=490 A/395 A, Tvjmax=+175.

The electrical characteristics of SKCD24C060IHD are I2t(@ Tvj=150, 10 ms, half sine wave)=780(max)A2s, IR(@ Tvj =25, VRRM)/(@ Tvj =150, VRRM)=0,2 mA(max)/--, VF(@ Tvj =25, IF=60A)/(@ Tvj =150, IF=60A)=1,35(TYP)V/1.31(TYP)V, V(TO)(@ Tvj =150)=0,85V, rT(@ Tvj =150)=7,8m.

And the thermal characteristics of SKCD24C060IHD are Tvj=-40 to +175=Tstg, Tsolder(@ 10 min)/(@ 5 min)=+250/+320, Rth(j-h)(@ soldered on 0, 38 mm DCB, reference point on copper heatsink close to the chip)=1, 21(typ)K/W.

The Mechanical Characteristics of SKCD24C060IHD are raster size(4,9 x 4,9 mm), Area total(24,01 mm2), Chips/wafer(422 pcs), Anode metallisation(bendable (AI)),  Cathode metallisation(solderable (Ag/Ni)), wire bond(AI, diameter500 pm).

This technical information about SKCD24C060IHD specifies semiconductor devices. No warranty or guarantee regarding delivery, performance or suitability.