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SKM200GB124D

Features: • MOS input (voltage controlled)• N channel, homogeneous Silicon structure NPT-IGBT (Non punch through)• Low saturation voltage• Low inductance case• Low tail current with low temperature dependence• High short circuit capability, self limiting to 6 * ...

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SKM200GB124D: Features: • MOS input (voltage controlled)• N channel, homogeneous Silicon structure NPT-IGBT (Non punch through)• Low saturation voltage• Low inductance case• Low tail...

SKM200GB124D Data Sheet

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Part Number:
SKM200GB124D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Description



Features:

• MOS input (voltage controlled)
• N channel, homogeneous Silicon structure NPT-IGBT (Non punch through)
• Low saturation voltage
• Low inductance case
• Low tail current with low temperature dependence
• High short circuit capability, self limiting to 6 * Icnom
• Latch-up free
• Fast & soft inverse CAL diodes 8)
• Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould
• Large clearance (12 mm) and creepage distances (20 mm)


Application

• Switching (not for linear use)
• Inverter drives
• UPS


Specifications

Symbol
Conditions 1)
Values
Units
VCES
VCGR
IC
ICM
VGES
Ptot
Tj, (Tstg)
Visol
humidity
climate
RGE = 20 kW
Tcase = 25/85 °C
Tcase = 25/85 °C; tp = 1 ms
per IGBT, Tcase = 25 °C
AC, 1 min.
DIN 40040
DIN IEC 68 T.1
1200
1200
290 / 200
580 / 400
± 20
1350
40 ... +150 (125)
2500
Class F
40/125/56
V
V
A
A
V
W
°C
V
IF = IC
IFM = ICM
IFSM
I2t
Tcase = 25/80 °C
Tcase = 25/80 °C; tp = 1 ms
tp = 10 ms; sin.; Tj = 150 °C
tp = 10 ms; Tj = 150 °C
195 / 130
580 / 400
1450
10 500
A
A
A
A2s



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