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SLN-286

Features: • Patented, Reliable GaAs HBT Technology• Low Noise Figure: 1.7 dB from 0.1 to 1.5 GHz• High Associated Gain: 27 dB Typ. at 2.0 GHz• True 50 Ohm MMIC : No External MatchingRequired• Low Current Draw : Only 5 mA at 3V• Low Cost Surface Mount Plastic Pac...

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SLN-286: Features: • Patented, Reliable GaAs HBT Technology• Low Noise Figure: 1.7 dB from 0.1 to 1.5 GHz• High Associated Gain: 27 dB Typ. at 2.0 GHz• True 50 Ohm MMIC : No External ...

SLN-286 Data Sheet

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Part Number:
SLN-286
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

• Patented, Reliable GaAs HBT Technology
• Low Noise Figure: 1.7 dB from 0.1 to 1.5 GHz
• High Associated Gain: 27 dB Typ. at 2.0 GHz
• True 50 Ohm MMIC : No External Matching Required
• Low Current Draw : Only 5 mA at 3V
• Low Cost Surface Mount Plastic Package


Application

• AMPS, PCS, DECT, Handsets
• Tri-Band & Broadband Receivers


Description

Stanford Microdevices' SLN-286 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost surface mount plastic package. A Darlington configuration is used for broadband performance from DC-3.5 GHz.

The SLN-286 needs only 2 DC-Blocking capacitors and a bias resistor for operation. Noise figure may be optimized by using 2-element matching at the input to yield <2.0 dB noise figure.

This 50 Ohm LNA requires only a single supply voltage and draws only 5mA. For broadband applications, it may be biased at 4mA with minimal effect on noise figure and gain.

The SLN-286 is available in tape and reel at 1000, 3000 and 5000 devices per reel.




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