Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 270 Watts 0.65/W 200 -65 to 150 11.0A 125V 125V 20VDescriptionSilicon VDMOS a...
SM746: Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSou...
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Features: SpecificationsDescriptionThe SM74120-T1 is designed as the dual inductor with some featu...
| Total Device Dissipation |
Junction to Case Thermal Resistance |
Maximum Junction Temperature |
Storage Temperature |
DC Drain Current |
Drain to Gate Voltage |
Drain to Source Voltage |
Gate to Source Voltage |
| 270 Watts | 0.65/W | 200 | -65 to 150 | 11.0A | 125V | 125V | 20V |
Silicon VDMOS and LDMOS transistors SM746 designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others."Polyfet"™ process featureslow feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.