Features: · High DC current gain: 0.1mA to 100mA· Low collector-emitter saturation voltage· Two ( galvanic) internal isolated Transistors with high matching in one package· Complementary type: SMBT 3906S (PNP)Specifications Parameter Symbol Value Unit Collector-emitter voltageC...
SMBT3904S: Features: · High DC current gain: 0.1mA to 100mA· Low collector-emitter saturation voltage· Two ( galvanic) internal isolated Transistors with high matching in one package· Complementary type: SMBT ...
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Features: · High DC current gain: 0.1 mA to 500 mA· Low collector-emitter saturation voltage· Comp...
|
Parameter |
Symbol |
Value |
Unit |
| Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Total power dissipation, TS = 115 °C Junction temperature Storage temperature |
VCEO VCBO VEBO IC Ptot Tj Tstg |
40 60 6 200 250 150 - 65...+150 |
V mA mW °C |
| Junction ambient 1) Junction - soldering point |
RthJA RthJS |
275 140 |
K/W |