Features: · High current gain· Low collector-emitter saturation voltage· Two (galvanic) internal isolated NPN/PNP Transistors in one packagePinoutSpecifications Parameter Symbol Value Unit Collector-emitter voltage VCEO 40 V Collector-base voltage VCBO 40 V Emitter-base volt...
SMBT3904UPN: Features: · High current gain· Low collector-emitter saturation voltage· Two (galvanic) internal isolated NPN/PNP Transistors in one packagePinoutSpecifications Parameter Symbol Value Unit ...
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Features: · High DC current gain: 0.1 mA to 500 mA· Low collector-emitter saturation voltage· Comp...

| Parameter | Symbol | Value | Unit |
| Collector-emitter voltage | VCEO | 40 | V |
| Collector-base voltage | VCBO | 40 | V |
| Emitter-base voltage | VEBO | 5 | V |
| DC collector current | IC | 200 | mA |
| Total power dissipation, TS = 105 °C | Ptot | 330 | mW |
| Junction temperature | Tj | 150 | °C |
| Storage temperature | Tstg | -65...150 | °C |