Features: · High breakdown voltage· Two (galvanic) internal isolated NPN/PNP Transistors in one packageSpecifications Parameter Symbol Value Unit Collector-emitter voltage VCEO 80 V Collector-base voltage VCBO 80 V Emitter-base voltage VEBO 4 V DC collector current IC...
SMBTA06UPN: Features: · High breakdown voltage· Two (galvanic) internal isolated NPN/PNP Transistors in one packageSpecifications Parameter Symbol Value Unit Collector-emitter voltage VCEO 80 V ...
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Features: · High DC current gain: 0.1 mA to 500 mA· Low collector-emitter saturation voltage· Comp...
| Parameter | Symbol | Value | Unit |
| Collector-emitter voltage | VCEO | 80 | V |
| Collector-base voltage | VCBO | 80 | V |
| Emitter-base voltage | VEBO | 4 | V |
| DC collector current | IC | 500 | mA |
| Peak collector current | ICM | 1 | A |
| Base current | IB | 100 | mA |
| Peak base current | IBM | 200 | mA |
| Total power dissipation, TS = 105 °C | Ptot | 330 | mW |
| Junction temperature | Tj | 150 | °C |
| Storage temperature | Tstg | -65...150 | °C |